BF1218

Dual N-channel dual-gate MOSFET


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The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges.The transistor has a SOT363 micro-miniature plastic package.

Features and benefits

  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio
  • Internal switch to save external components
  • Superior cross modulation performance during AGC
  • Two low noise gain controlled amplifiers in a single package

Applications

  • digital and analog television tuners
  • professional communication equipment
All information on this product information page is subject to the subsequent disclaimers:
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Parametric search

Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltageDC6V
IDdrain currentDC30mA
Ptottotal power dissipationTsp ≤ 107 °C [2]180mW
Tjjunction temperature150°C
Dynamic characteristics for amplifier A; Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA)
|yfs|forward transfer admittanceVDS = 5 V; Tj = 25 °C; f = 100 MHz; ID = 18 mA263141mS
Ciss(G1)input capacitance at gate1VDS = 5 V; ID = 19 mA; f = 100 MHz [0]2.12.6pF
Cossoutput capacitanceVDS = 5 V; f = 100 MHz; Tj = 25 °C [0]0.8pF
Crssreverse transfer capacitanceVDS = 5 V; f = 100 MHz [0]20fF
NFnoise figuref = 800 MHz1.11.7dB
Xmodcross modulation voltagek = 1 %; funw = 60 MHz; fw = 50 MHz; at 40 dB AGC [3]102105dBμV
Static characteristics (Tj = 25 °C)
IDSdrain-source currentVDS(B) = 5 V; VG2-S = 4 V; RG1 = 86 kΩ; amplifier A: VDS(A) = 5 V [1]1424mA
VGS(th)G1gate-source threshold voltageVDS = 5 V; ID = 100 µA0.31V

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BF1218BF1218,1159340 639 98115Volume productionSOT363
(TSSOP6) 		Tape reel smdM7%

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1G1(A)gate1 (amplifier A)SOT363 (SC-88)graphic symbol BF1218
2G2gate2
3G1(B)gate1 (amplifier B)
4D(B)drain (amplifier B)
5Ssource
6D(A)drain (amplifier A)

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BF1218BF1218,115BF1218Always Pb-free11
Quality and reliability disclaimer

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfDual N-channel dual gate MOSFET (v.1.0)2010-04-14

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BF12189340 639 98115BF1218,115NADIGI-KEY CORPORATION2,8655/23/2012Buy online 
   NAAVNET EXPRESS2005/23/2012Buy online 

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