N-channel vertical D-MOS logic level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
|VDS||drain-source voltage||Tj ≥ 25 °C; Tj ≤ 150 °C||250||V|
|ID||drain current||Tsp = 25 °C||375||mA|
|Ptot||total power dissipation||Tamb ≤ 25 °C ||1.5||W|
|RDSon||drain-source on-state resistance||VGS = 10 V; ID = 300 mA; Tj = 25 °C||2.8||5||Ω|
|RDSon||drain-source on-state resistance||VGS = 2.5 V; ID = 20 mA; Tj = 25 °C||7.5||Ω|
|Type number||Ordering code (12NC)||Orderable part number||Region||Distributor||In stock||Order quantity||Inventory date||Buy online||Samples|
|BSP126||9340 005 40135||BSP126,135||not available|
|BSP126||9340 005 40115||BSP126,115||not available|
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with NXP our network of global and regional distributors is available and equipped to support you with NXP samples. As a NXP customer you also have the option to order samples via our sales organisation.