PSMN5R0-30YL

N-channel 30 V 5 mΩ logic level MOSFET in LFPAK


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Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Suitable for logic level gate drive sources

Applications

  • Class-D amplifiers
  • DC-to-DC converters
  • Motor control
  • Server power supplies
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltageTj ≥ 25 °C; Tj ≤ 175 °C30V
IDdrain currentTmb = 25 °C; VGS = 10 V91A
Ptottotal power dissipationTmb = 25 °C61W
Tjjunction temperature-55175°C
Static characteristics
RDSondrain-source on-state resistanceVGS = 10 V; ID = 15 A; Tj = 25 °C3.635mΩ
Dynamic characteristics
QGDgate-drain chargeVGS = 4.5 V; ID = 10 A; VDS = 12 V3.8nC
QG(tot)total gate chargeVGS = 4.5 V; ID = 10 A; VDS = 12 V14.1nC
Avalanche ruggedness
EDS(AL)Snon-repetitive drain-source avalanche energyVGS = 10 V; Tj(init) = 25 °C; ID = 84 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped32mJ

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
PSMN5R0-30YLPSMN5R0-30YL,1159340 630 75115Volume productionSOT669
(LFPAK; Power-SO8) 		Tape reel smd5R030

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1SsourceSOT669 (LFPAK; Power-SO8)
2Ssource
3Ssource
4Ggate
mbDmounting base; connected to drain

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
PSMN5R0-30YLPSMN5R0-30YL,115PSMN5R0-30YL11
Quality and reliability disclaimer

Quality and reliability disclaimer

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NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfN-channel 30 V 5 mOhm logic level MOSFET in LFPAK (v.4.0)2011-03-09
Application notepdfLogic level VGS ratings for NXP power MOSFETs (v.1.0)2008-07-18
Application notepdfLFPAK MOSFET thermal design guide (v.2.0)2011-01-27
Application notepdfLFPAK MOSFET thermal design guide - Part 2 (v.2.0)2011-11-16
Application notepdfUnderstanding Power MOSFET Datasheet Parameters (v.1.0)2012-04-17
LeafletpdfLFPAK - The Toughest Power SO8 (v.1.2)2010-03-17
Leafletpdf25 V to 100 V MOSFETs in Power-SO8 (v.1.0)2010-01-13
Selection guidepdfNXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)2012-01-19
SPICE modellibPSMN5R0-30YL SPICE model (v.1.0)2010-03-16
SPICE modelprmPSMN5R0_30YL SPICE model (v.1.0)2012-05-03
Thermal modelpdmlPSMN5R0-30YL Thermal model (v.1.0)2008-08-27

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
PSMN5R0-30YL9340 630 75115PSMN5R0-30YL,115ASIAARROW ASIA PAC LTD79,5005/23/2012Buy online 
   ASIAWPI6,000150005/14/2012Buy online 
   NADIGI-KEY CORPORATION4,1515/24/2012Buy online 
   EUFARNELL8095/24/2012Buy online 
   ASIAELEMENT14 APAC6695/24/2012Buy online 
   NAMOUSER ELECTRONICS3205/24/2012Buy online 
   NAMOUSER ELECTRONICS3205/24/2012Buy online 
   NAAVNET EXPRESS1905/24/2012Buy online 
   JAPANCHIP ONE STOPyes05/14/2012Buy online 

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