N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
|VDS||drain-source voltage||25 °C ≤ Tj ≤ 175 °C||30||V|
|ID||drain current||Tmb = 25 °C; VGS = 10 V||66||A|
|Ptot||total power dissipation||Tmb = 25 °C||47||W|
|RDSon||drain-source on-state resistance||VGS = 4.5 V; ID = 15 A; Tj = 25 °C||6.7||8.35||mΩ|
|RDSon||drain-source on-state resistance||VGS = 10 V; ID = 15 A; Tj = 25 °C||5||6||mΩ|
|S||softness factor||IS = 15 A; VGS = 0 V; dIS/dt = -100 A/µs; VDS = 15 V||1.2|
|QGD||gate-drain charge||VGS = 4.5 V; ID = 15 A; VDS = 15 V||1.8||nC|
|QG(tot)||total gate charge||VGS = 4.5 V; ID = 15 A; VDS = 15 V||6.5||nC|
|Pin||Symbol||Description||Simplified outline||Graphic symbol|
|mb||D||mounting base; connected to drain|
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