PSMN6R0-30YLD

N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology


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Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features and benefits

  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
  • Superfast switching with soft-recovery; s-factor > 1
  • Low spiking and ringing for low EMI designs
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
  • Optimised for 4.5 V gate drive
  • Low parasitic inductance and resistance
  • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
  • Wave solderable; exposed leads for optimal visual solder inspection

Applications

  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control
All information on this product information page is subject to the subsequent disclaimers:

Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltage25 °C ≤ Tj ≤ 175 °C30V
IDdrain currentTmb = 25 °C; VGS = 10 V66A
Ptottotal power dissipationTmb = 25 °C47W
Tjjunction temperature-55175°C
Static characteristics
RDSondrain-source on-state resistanceVGS = 4.5 V; ID = 15 A; Tj = 25 °C6.78.35
RDSondrain-source on-state resistanceVGS = 10 V; ID = 15 A; Tj = 25 °C56
Source-drain diode
Ssoftness factorVDS = 15 V; IS = 15 A; VGS = 0 V; dIS/dt = -100 A/µs1.2
Dynamic characteristics
QGDgate-drain chargeVGS = 4.5 V; ID = 15 A; VDS = 15 V2.13.15nC
QG(tot)total gate chargeVGS = 4.5 V; ID = 15 A; VDS = 15 V6.710nC

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1SsourceSOT669 (LFPAK; Power-SO8)
2Ssource
3Ssource
4Ggate
mbDmounting base; connected to drain

Documentation for this product

File nameTitleTypeFormatDate
PSMN6R0-30YLDN-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 TechnologyData sheetpdf2014-02-10
PSMN6R0-30YLDPSMN6R0-30YLD Spice modelSPICE modellib2013-09-18
PSMN6R0-30YLDPSMN6R0-30YLD Thermal modelThermal modelpdml2013-09-18
SOT669_115LFPAK; Tape reel SMD; standard product orientation 12NC ending 115Packingpdf2012-11-29
sot669_poplastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leadsOutline drawingpdf2011-03-28
sot669_frFootprint for reflow soldering SOT669Reflow solderingpdf2009-12-16

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Find answers to your design questions on this page. If available you can find information in our NXP Support Community or you can find NXP models, Demo boards and Design tools.

Models

TitleTypeDate
PSMN6R0-30YLD Spice modelSPICE model2013-09-18
PSMN6R0-30YLD Thermal modelThermal model2013-09-18

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