
SI2304DS
N-channel TrenchMOS intermediate level FET
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| VDS | drain-source voltage | Tj ≥ 25 °C; Tj ≤ 150 °C | 30 | V | ||
| ID | drain current | Tsp = 25 °C; VGS = 5 V | 1.7 | A | ||
| Ptot | total power dissipation | Tsp = 25 °C | 0.83 | W | ||
| Static characteristics | ||||||
| RDSon | drain-source on-state resistance | VGS = 4.5 V; ID = 500 mA; Tj = 25 °C | 190 | mΩ | ||
| RDSon | drain-source on-state resistance | VGS = 10 V; ID = 500 mA; Tj = 25 °C | 117 | mΩ | ||
| Dynamic characteristics | ||||||
| QGD | gate-drain charge | VGS = 10 V; ID = 0.5 A; VDS = 15 V; Tj = 25 °C | 1.35 | 1.83 | nC | |
| QG(tot) | total gate charge | VGS = 10 V; ID = 0.5 A; VDS = 15 V; Tj = 25 °C | 4.6 | nC | ||
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking |
|---|---|---|---|---|---|---|
| SI2304DS | SI2304DS,215 | 9340 566 33215 | Volume production | SOT23 (TO-236AB) | Tape reel smd | %2S |
The variants in the table below are discontinued. See the table Discontinuation information at the bottom of this page for more information.
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking |
|---|---|---|---|---|---|---|
| SI2304DS/DG | SI2304DS/DG,215 | 9340 617 75215 | Discontinued Replacement product | SOT23 (TO-236AB) | Tape reel smd | ZU% |
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| SI2304DS/DG | 934061775215 | 31-Dec-11 | 30-Jun-12 | SI2304DS | DN 201106016DNU01 | Variant/Package Withdrawal | Multi-Source. Standard End of Life. |
| Type number | Orderable part number | Chemical content | RoHS | Leadfree conversion date | RHF | IFR (FIT) | MTBF (hours) | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|
| SI2304DS | SI2304DS,215 | SI2304DS | week 35, 2003 | 1 | 1 |
The variants in the table below are discontinued. See the table Discontinuation information at the bottom of this page for more information.
| Type number | Orderable part number | Chemical content | RoHS | Leadfree conversion date | RHF | IFR (FIT) | MTBF (hours) | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|
| SI2304DS/DG | SI2304DS/DG,215 | SI2304DS/DG | Always Pb-free | 1 | 1 |
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| SI2304DS/DG | 934061775215 | 31-Dec-11 | 30-Jun-12 | SI2304DS | DN 201106016DNU01 | Variant/Package Withdrawal | Multi-Source. Standard End of Life. |
| Type | Format | Title | Date |
|---|---|---|---|
| Data sheet | N-channel enhancement mode field-effect transistor (v.1.0) | 2001-08-20 | |
| Application note | Understanding Power MOSFET Datasheet Parameters (v.1.0) | 2012-04-17 | |
| Line card | Broad small-signal MOSFET portfolio to suit a wide range of applications (v.2.0) | 2011-06-06 | |
| Selection guide | NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1) | 2012-01-19 |
Sample orders normally take 2-4 days for delivery.
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