256K x 18 3.3V Late Write

The MCM69R736C/818C is a 4M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69R818C (organized as 256K words by 18 bits) and the MCM69R736C (organized as 128K words by 36 bits) are fabricated in NXP’s high performance silicon gate BiCMOS technology.