64K x 18 5V Flow-Through BurstRAM^TM

The MCM67B618B is a 1,179,648–bit synchronous fast static random access memory designed to provide a burstable, high–performance, secondary cache for the i486E and Pentium^TM microprocessors. The MCM67B618B (organized as 65,536 words by 18 bits) is fabricated using Motorola’s high–performance silicon–gate BiCMOS technology. The device integrates input registers, a 2–bit counter, high speed SRAM, and high drive capability outputs onto a single monolithic circuit for reduced parts count implementation of cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.