860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers

Replaced by MW4IC915NBR1(GNBR1). There are no form, fit or function changes with this part replacement.

The MW4IC915MBR1 and MW4IC915GMBR1 wideband integrated circuits are designed for GSM and GSM EDGE base station applications. They use our high voltage (26 to 28 Volts) LDMOS IC technology and integrate a multi–stage structure. Their wideband On-Chip design makes them usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N–CDMA and W–CDMA.