865-960 MHz, 27 W Avg., 28 V, Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

The MRF6S9125NR1 and MRF6S9125NBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equipment.