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Multi-chip 25 - 300 V MOSFETs

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PMGD400UN

Dual N-channel uTrenchmos (tm) ultra low level FET

Datasheet (95Kb)

Latest application notes

AN10661 1 (426Kb)
AN10513 1 (358Kb)

One of the world's leading manufacturers of PowerMOS products, NXP offers cost- and performance-optimized MOSFETs in a wide range of packages and voltage levels based on our industry-leading TrenchMOS technology.


For example our LFPAK power MOSFET range brings the benefits of ultra-low RDS(on) and high-speed switching to applications requiring transistors with voltage ratings up to 100 V. And our robust and easy-to-use, standard power MOSFETs have helped drive the move to replace bipolar transistors in controlling the speed and direction of low-voltage brushed and brushless DC motors.



NXP has taken PowerMOS products to the next generation in response to the trend for smaller, more highly featured portable and domestic appliances. By combining our expertise in package miniaturization and advanced Trench technology, the innovative µTrenchMOS™ family delivers world-class performance in a range of ultra-compact, industry-standard packages making it the ideal choice for all space- and power-critical applications.