BLC8G20LS-310AV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC8G20LS-310AV
Download datasheetPower LDMOS transistor
310 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1900 MHz to 2000 MHz.
Features and benefits
- Excellent ruggedness
- High-efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to 2000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1900 | 2000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 310 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 56 W; VDS = 28 V [0] | 15.8 | 16.9 | dB | |
| RLin | input return loss | PL(AV) = 56 W; VDS = 28 V [0] | -10 | -6 | dB | |
| ηD | drain efficiency | PL(AV) = 56 W [0] | 38 | 42.5 | % | |
| PL(M) | peak output power | PL(AV) = 56 W [1] | 281 | 300 | W | |
| ACPR | adjacent channel power ratio | PL(AV) = 56 W [0] | -33 | -28 | dBc | |
| PARo | output peak-to-average ratio | PL(AV) = 56 W [1] | 7 | 7.25 | dB | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC8G20LS-310AV | DFM6 (SOT1258-1) |
sot1258-1_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC8G20LS-310AVY (9340 687 41518) |
|
| Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC8G20LS-310AVZ (9340 687 41517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D2P | drain2 (peak) |
|
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| 2 | D1M | drain1 (main) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | S | source | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | VDM | video decoupling (main) |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2017-11-24 | |
| Biasing Asymmetrical Doherty RF Power Transistor | Other type | 2016-08-31 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC8G20LS-310AV (Data sheet) | Design support | 2015-05-12 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| BLC8G20LS-310AV Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-27 |