BLF6G15L-250PBRN

Power LDMOS transistor


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250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1450 MHz to 1550 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
  • Intergrated current sense

Applications

  • RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
  • Multi carrier applications in the 1450 MHz to 1550 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: 2-c WCDMA
PL(AV)average output power60W
Gppower gainVDS = 28 V; PL(AV) = 60 W16.518.5dB
RLininput return lossVDS = 28 V; IDq = 1410 mA; PL(AV) = 60 W-12-8dB
ηDdrain efficiencyVDS = 28 V; 1450 MHz < f < 1550 MHz; IDq = 1410 mA; PL(AV) = 60 W3033%
ACPRadjacent channel power ratioPL(AV) = 60 W; VDS = 28 V; IDq = 1410 mA; 1450 MHz < f < 1550 MHz-32-27dBc
frangefrequency range14501550MHz
PL(1dB)nominal output power at 1 dB gain compression250W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF6G15L-250PBRNBLF6G15L-250PBRN,19340 643 01112Volume productionSOT1110A
(CDFM8) 		Bulk PackStandard Marking
BLF6G15L-250PBRNBLF6G15L-250PBRN:19340 643 01118Volume productionSOT1110A
(CDFM8) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1D1drain1SOT1110a simplified viewPower LDMOS transistor
2D2drain2
3G1gate1
4G2gate2
5Ssource
6SDsense drain
7SDsense drain
8SGsense gate
9SGsense gate

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF6G15L-250PBRNBLF6G15L-250PBRN,1BLF6G15L-250PBRNAlways Pb-freeNANA
BLF6G15L-250PBRNBLF6G15L-250PBRN:1BLF6G15L-250PBRNAlways Pb-freeNANA
Quality and reliability disclaimer

Quality and reliability disclaimer

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NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.2.0)2010-11-03
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
Application notepdf1.5GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN (v.1.0)2011-03-14
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typezipPCB Design BLF6G15L-250PBRN (AN10923) (v.2.2)2011-03-24
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLF6G15L-250PBRN ADS Model (v.1.0)2011-01-12

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF6G15L-250PBRN9340 643 01112BLF6G15L-250PBRN,1       
BLF6G15L-250PBRN9340 643 01118BLF6G15L-250PBRN:1      not available

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