
BLF6G22LS-40P
Power LDMOS transistor
LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| Test signal: 2-c WCDMA | ||||||
| PL(AV) | average output power | [0] | 13.5 | W | ||
| Gp | power gain | VDS = 28 V; PL(AV) = 13.5 W [0] | 17.8 | 19 | dB | |
| RLin | input return loss | IDq = 410 mA; PL(AV) = 13.5 W; VDS = 28 V [0] | -15 | -9 | dB | |
| ηD | drain efficiency | VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 410 mA; PL(AV) = 13.5 W [0] | 26.5 | 30 | % | |
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 13.5 W; VDS = 28 V; IDq = 410 mA; 2110 MHz ≤ f ≤ 2170 MHz [0] | -30 | -27 | dBc | |
| ACPR10M | adjacent channel power ratio (10 MHz) | PL(AV) = 13.5 W; VDS = 28 V; IDq = 410 mA; 2110 MHz ≤ f ≤ 2170 MHz [0] | -39 | -36 | dBc | |
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 40 | W | |||
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking |
|---|---|---|---|---|---|---|
| BLF6G22LS-40P | BLF6G22LS-40P,112 | 9340 653 26112 | Volume production | SOT1121B (CDFM4) | Bulk Pack | Standard Marking |
| BLF6G22LS-40P | BLF6G22LS-40P,118 | 9340 653 26118 | Volume production | SOT1121B (CDFM4) | Reel Pack, SMD, 13" | Standard Marking |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 | ![]() | ![]() |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
| Type number | Orderable part number | Chemical content | RoHS | Leadfree conversion date | RHF | IFR (FIT) | MTBF (hours) | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|
| BLF6G22LS-40P | BLF6G22LS-40P,112 | BLF6G22LS-40P | Always Pb-free | NA | 6 | ||||
| BLF6G22LS-40P | BLF6G22LS-40P,118 | BLF6G22LS-40P | Always Pb-free | NA | NA |
| Type | Format | Title | Date |
|---|---|---|---|
| Data sheet | Power LDMOS transistor (v.1.0) | 2011-09-22 | |
| Application note | Mounting and Soldering of RF transistors (v.1.0) | 2010-06-02 | |
| Brochure | Your partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0) | 2011-05-23 | |
| Mounting and soldering | Fatigue in aluminum bond wires (v.1.0) | 2009-10-08 | |
| Selection guide | NXP's RF Manual 15th edition (v.1.0) | 2011-05-19 | |
| Simulation model | zip | BLF6G22-40P ADS Model (v.1.0) | 2011-04-19 |
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