BLD6G21L-50

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor


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The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

Features and benefits

  • Fully optimized integrated Doherty concept
  • Integrated assymetrical power splitter at input
  • Integrated power combiner
  • Peak biasing down to 0 V
  • Low junction temperature
  • High efficiency
  • 100 % peak power tested for guaranteed output power capability
  • Integrated ESD protection
  • Good pair match (main and peak on the same chip)
  • Independent control of main and peak bias
  • Internally matched for ease of use
  • Excellent ruggedness
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • High efficiency RF power amplifiers for TD-SCDMA multicarrier applications.
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: TD-SCDMA
PL(AV)average output power [0]8W
Gppower gainVDS = 28 V; PL(AV) = 8 W [0]1314.5dB
RLininput return lossVDS = 28 V; IDq = 170 mA; PL(AV) = 8 W [0]-23-8dB
ηDdrain efficiencyVDS = 28 V; 2010 MHz ≤ f ≤ 2025 MHz; IDq = 170 mA; PL(AV) = 8 W [0]3943%
ACPRadjacent channel power ratio2025 MHz ≤ f ≤ 2010 MHz; PL(AV) = 8 W; VDS = 28 V; IDq = 170 mA [0]-24-20dB
PARooutput peak-to-average ratioPL(AV) = 8 W [0]9.4dB
frangefrequency range20102025MHz
PL(1dB)nominal output power at 1 dB gain compression50W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLD6G21L-50BLD6G21L-50,1129340 635 08112Volume productionSOT1130A
(CDFM4) 		Bulk PackStandard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1Ddrainsot1130a_sv (CDFM4)Graphic symbol
2G+BMgate + bias main
3Ssource
4n.c.not connected
5BPbias peak

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLD6G21L-50BLD6G21L-50,112BLD6G21L-50Always Pb-freeNANA
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Documentation for this product

TypeFormatTitleDate
Data sheetpdfTD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor (v.2.0)2010-08-17
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLD6G21L-509340 635 08112BLD6G21L-50,112EUAVNET EXPRESS EUROPE205/24/2012Buy online 
   NADIGI-KEY CORPORATION105/24/2012Buy online 
   JAPANCHIP ONE STOPno05/14/2012Buy online 

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