BLF7G27LS-150P

Power LDMOS transistor


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150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Features and benefits

  • Designed for low memory effects providing excellent pre-distortability
  • Internally matched for ease of use
  • Excellent ruggedness
  • Integrated ESD protection
  • High efficiency
  • Designed for broadband operation (2500 MHz to 2700 MHz)
  • Low Rth providing excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 2500 MHz to 2700 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: NCDMA/IS95
PL(AV)average output power30W
Gppower gainVDS = 28 V14.816.5dB
RLininput return lossVDS = 28 V; IDq 1200 mA-10dB
ηDdrain efficiencyVDS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; IDq 1200 mA2226%
ACPR885kadjacent channel power ratio (885 kHz)PL(AV) = 30 W; VDS = 28 V; IDq 1200 mA; 2500 MHz ≤ f ≤ 2700 MHz-43-47dBc
frangefrequency range25002700MHz
PL(1dB)nominal output power at 1 dB gain compression150W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF7G27LS-150PBLF7G27LS-150P,1129340 645 88112Volume productionSOT539B
(SOT539B) 		Bulk PackStandard Marking
BLF7G27LS-150PBLF7G27LS-150P,1189340 645 88118Volume productionSOT539B
(SOT539B) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DRAIN1drain 1SOT539B (LDMOST)BLF369; symbol drawing
2DRAIN2drain 2
3GATE1gate 1
4GATE2gate 2
5SOURCEsource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF7G27LS-150PBLF7G27LS-150P,112BLF7G27LS-150PAlways Pb-freeNANA
BLF7G27LS-150PBLF7G27LS-150P,118BLF7G27LS-150PAlways Pb-freeNANA
Quality and reliability disclaimer

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NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.1.0)2010-11-12
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
Application notepdf2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P (v.1.0)2010-08-16
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typezipPCB Design BLF7G27L(S)-150P (AN10933) (v.2.1)2011-03-08
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLF7G27-150P ADS Model (v.1.0)2011-01-14

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF7G27LS-150P9340 645 88112BLF7G27LS-150P,112NAMOUSER ELECTRONICS155/24/2012Buy online 
   NAMOUSER ELECTRONICS155/24/2012Buy online 
BLF7G27LS-150P9340 645 88118BLF7G27LS-150P,118      not available

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