Power LDMOS transistor
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating.
|PL(1dB)||nominal output power at 1 dB gain compression||250||W|
|Test signal: CW|
|Gp||power gain||VDS = 28 V; PL = 250 W||14||15||dB|
|ηD||drain efficiency||VDS = 28 V; f = 2450 MHz; IDq = 20 mA; PL = 250 W||46||51||%|
|IRL||input return loss||VDS = 28 V; IDq = 20 mA; PL = 250 W||-18||-10||dB|
|Pin||Symbol||Description||Simplified outline||Graphic symbol|
|Package Version||Package Name||Package Description||Reference Codes||Issue Date|
|SOT539B||SOT539B||earless flanged balanced ceramic package; 4 leads||2010-02-02|
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with NXP our network of global and regional distributors is available and equipped to support you with NXP samples. As a NXP customer you also have the option to order samples via our sales organisation.