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BAW filters
NXP offers RF filters and duplexers based on next generation BAW (Bulk Acoustic Wave) technology that bring you unparalleled performance in a small size.
Our solutions offer design flexibility and out-perform traditional SAW and ceramic alternatives, while seamless integration ensures cost-savings and reduces time-to-market.
Key benefits
- Minimal time-to-market through seamless integration into RF front-end modules and handset RF architectures
- Design flexibility with minimal RF real-estate trade-off, delivers improved form factor
- Longer battery life, less dropped calls and higher data rates due to improved receiver sensitivity and power efficiency
- All benefi ts attributable to inherent overall performance of NXP BAW technology, which outstrips current filtering alternatives
Key features
- Low in-band insertion loss and channel ripple
- High out-of-band rejection and isolation profi les
- Low temperature drift
- Superior power handling
- Enhanced ESD robustness
- Ultra-small wafer level Chip Scale Package
- footprint down to 1.2 mm2
- very low profile (height < 450 µm after solder refl ow)
Key applications
- Cellular phones (discrete and front-end module solutions)
- UMTS interstage filter (band II)
- UMTS duplexer (band I, II, III, VII)
- Connectivity
- WLAN filter
- Bluetooth filter
- GPS filter
- Broadcasting
- satellite radio filter
- Infrastructure
- pico / femtocell basestation filter
A growing family of targeted products
Our growing BAW family supports a variety of applications in (W-)CDMA and other wireless applications above 1.5 GHz. The first products are targeted towards band II (USPCS), where BAW technology will provide an instant advantage. These are the interstage transmit filter BWT190 and full duplexer BWD190. NXP will also release the BWD210 for UMTS band I, the BWD180 for UMTS band III and the BWD260 for UMTS band VII.
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