BLA6G1011-200R

Power LDMOS transistor


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200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1030 MHz to 1090 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

Applications

  • Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range10301090MHz
PL(1dB)nominal output power at 1 dB gain compression200W
Test signal: Pulsed RF
PLoutput power200W
Gppower gainVDS = 28 V; PL = 200 W1820dB
ηDdrain efficiencyVDS = 28 V; 1030 MHz ≤ f ≤ 1090 MHz; IDq = 100 mA; PL = 200 W5865%
trrise timeVDS = 28 V; PL = 200 W1020ns
tffall timeVDS = 28 V; PL = 200 W.620ns
RLininput return lossVDS = 28 V; IDq = 100 mA; PL = 200 W-10-8dB

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLA6G1011-200RBLA6G1011-200R,1129340 636 02112Volume productionSOT502A
(SOT502A) 		Blister packStandard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT502A (LDMOST)N-channel Enhancement type MOSFET
2Ggate
3Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLA6G1011-200RBLA6G1011-200R,112BLA6G1011-200RAlways Pb-freeNANA
Quality and reliability disclaimer

Quality and reliability disclaimer

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NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.4.0)2011-11-09
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
BrochurepdfHigh performance aerospace and defense solutions (v.1.2)2010-12-15
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typepdfHigh Power RF LDMOS Transistors for Avionics Applications (v.1.0)2009-01-13
Other typezipPCB Design BLA6G1011-200R & BLA6G1011L(S)-200RG 1030-1090 MHz Pulsed-RF (Data sheet) (v.1.0)2009-02-25
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipRF Power Model Library for MicroWave Office (v.2.1)2012-05-22
Simulation modelpdfRF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)2012-05-22
Simulation modelzipBLA6G1011-200R ADS Model (v.1.0)2010-11-03

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLA6G1011-200R9340 636 02112BLA6G1011-200R,112NADIGI-KEY CORPORATION205/24/2012Buy online 
   NAAVNET EXPRESS165/24/2012Buy online 
   JAPANCHIP ONE STOPno05/14/2012Buy online 

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