BLF6G10LS-135RN

Power LDMOS transistor


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135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (700 MHz to 1000 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding RoHS

Applications

  • RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
  • Multi carrier applications in the 700 MHz to 1000 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: 2-c WCDMA
PL(AV)average output power26.5W
Gppower gainVDS = 28 V; PL(AV) = 26.5 W2021dB
ηDdrain efficiencyVDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA; PL(AV) = 26.5 W2628%
ACPRadjacent channel power ratioPL(AV) = 26.5 W; VDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA-39-36.5dBc
RLininput return lossVDS = 28 V; IDq = 950 mA; PL(AV) = 26.5 W-10-6.5dB
frangefrequency range7001000MHz
PL(1dB)nominal output power at 1 dB gain compression135W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF6G10LS-135RNBLF6G10LS-135RN:119340 632 07112Volume productionSOT502B
(SOT502B) 		Blister packStandard Marking
BLF6G10LS-135RNBLF6G10LS-135RN,119340 632 07118Volume productionSOT502B
(SOT502B) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT502B (LDMOST)N-channel Enhancement type MOSFET
2Ggate
3Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF6G10LS-135RNBLF6G10LS-135RN:11BLF6G10LS-135RNAlways Pb-freeNANA
BLF6G10LS-135RNBLF6G10LS-135RN,11BLF6G10LS-135RNAlways Pb-freeNANA
Quality and reliability disclaimer

Quality and reliability disclaimer

Important Legal Notice on the product/generic quality information, No Warranty

NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.2.0)2010-01-21
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipRF Power Model Library for MicroWave Office (v.2.1)2012-05-22
Simulation modelpdfRF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)2012-05-22
Simulation modelzipBLF6G10-135R ADS Model (v.1.0)2010-11-03

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF6G10LS-135RN9340 632 07112BLF6G10LS-135RN:11NADIGI-KEY CORPORATION155/24/2012Buy online 
   JAPANCHIP ONE STOPno05/14/2012Buy online 
BLF6G10LS-135RN9340 632 07118BLF6G10LS-135RN,11JAPANCHIP ONE STOPno05/14/2012Buy onlinenot available

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