BLF6G20-230PRN

Power LDMOS transistor


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230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1800 MHz to 2000 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 1800 MHz to 2000 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: 2-c WCDMA
Gppower gainVDS = 28 V; PL(AV) = 65 W [0]16.317.518.7dB
ηDdrain efficiencyVDS = 28 V; 1805 MHz < f < 1880 MHz; IDq = 2000 mA; PL(AV) = 65 W [0]2932%
ACPRadjacent channel power ratioPL(AV) = 65 W; VDS = 28 V; IDq = 2000 mA; 1805 MHz < f < 1880 MHz [0]-31-27dBc
RLininput return lossVDS = 28 V; IDq = 2000 mA; PL(AV) = 65 W [0]-11-6.5dB
frangefrequency range18002000MHz
PL(1dB)nominal output power at 1 dB gain compression230W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF6G20-230PRNBLF6G20-230PRN,1129340 632 93112Volume productionSOT539A
(SOT539A) 		Blister packStandard Marking
BLF6G20-230PRNBLF6G20-230PRN,1189340 632 93118Volume productionSOT539A
(SOT539A) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1D1drain 1SOT539A (LDMOST)BLF369; symbol drawing
2D2drain 2
3G1gate 1
4G2gate 2
5Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF6G20-230PRNBLF6G20-230PRN,112BLF6G20-230PRNAlways Pb-freeNANA
BLF6G20-230PRNBLF6G20-230PRN,118BLF6G20-230PRNAlways Pb-freeNANA
Quality and reliability disclaimer

Quality and reliability disclaimer

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NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.2.0)2010-02-09
Application notepdfDoherty RF performance using the BLF6G20-230PRN (v.1.0)2010-02-02
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typezipPCB Design BLF6G20(S)-230PRN (AN10847) (v.2.1)2011-03-08
Other typezipPCB Design BLF6G20(S)-230PRN (Data sheet) (v.1.1)2009-01-13
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLF6G20-230PRN ADS Model (v.1.1)2010-02-12

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF6G20-230PRN9340 632 93112BLF6G20-230PRN,112JAPANCHIP ONE STOPno05/14/2012Buy online 
BLF6G20-230PRN9340 632 93118BLF6G20-230PRN,118      not available

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