BLF7G21LS-160P

Power LDMOS transistor


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160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz

Features and benefits

  • Excellent ruggedness
  • High efficiency
  • Low Rth providing excellent thermal stability
  • Designed for broadband operation (1800 MHz to 2050 MHz)
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent pre-distortability
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 1800 MHz to 2050 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: 2-c WCDMA
PL(AV)average output power45W
Gppower gainVDS = 28 V; PL(AV) = 45 W [0]1718dB
RLininput return lossVDS = 28 V; IDq = 1080 mA; PL(AV) = 45 W [0]-15-8dB
ηDdrain efficiencyVDS = 28 V; 1930 MHz ≤ f ≤ 1990 MHz; IDq = 1080 mA; PL(AV) = 45 W [0]3134%
ACPR5Madjacent channel power ratio (5 MHz)1990 MHz ≤ f ≤ 1930 MHz; PL(AV) = 45 W; VDS = 28 V; IDq = 1080 mA [0]-30-25dBc
frangefrequency range18002050MHz
PL(1dB)nominal output power at 1 dB gain compression160W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF7G21LS-160PBLF7G21LS-160P,1129340 652 41112Volume productionSOT1121B
(CDFM4) 		Bulk PackStandard Marking
BLF7G21LS-160PBLF7G21LS-160P,1189340 652 41118Volume productionSOT1121B
(CDFM4) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1D1drain1sot1121b_sv (CDFM4)BLF369; symbol drawing
2D2drain2
3G1gate1
4G2gate2
5Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF7G21LS-160PBLF7G21LS-160P,112BLF7G21LS-160PAlways Pb-freeNANA
BLF7G21LS-160PBLF7G21LS-160P,118BLF7G21LS-160PAlways Pb-freeNANA
Quality and reliability disclaimer

Quality and reliability disclaimer

Important Legal Notice on the product/generic quality information, No Warranty

NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.2.0)2011-10-13
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
Application notepdf1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P (v.1.0)2010-12-10
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typezipPCB Design BLF7G20L(S)-90P BLF7G21L(S)-160P (AN10951) (v.2.2)2011-03-08
Other typezipPCB Design BLF7G21L(S)-160(P) (Data sheet) (v.1.0)2012-03-27
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLF7G21L-160P ADS Model (v.1.0)2011-01-13

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF7G21LS-160P9340 652 41112BLF7G21LS-160P,112       
BLF7G21LS-160P9340 652 41118BLF7G21LS-160P,118      not available

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