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Mainstream GaN

With 30+ years of experience delivering RF power transistors, NXP is leading the industry in bringing GaN RF power devices into a secure and reliable mainstream supply chain for Base Station, Industrial Scientific & Medical and Aerospace & Defense applications.

NXP’s first generation GaN process technology features best in class linearity while at the same time allowing designers to maintain power, ruggedness and efficiency. This enables an uncompromised amplifier design that can reduce component count and reduce amplifier footprint. NXP’s leading back end assembly facility consistently leverages the high power density of GaN into smaller and more broadband circuitry.

Through a broad portfolio of high performance GaN and LDMOS products, only NXP offers you unbiased choices enabling optimized designs for your application.

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New and updated products

CLF1G0035-100

Broadband RF power GaN HEMT

CLF1G0035-50

Broadband RF power GaN HEMT



Key features and benefits

  • High frequencies, bandwidth up to 6 GHz
  • High efficiencies
  • High power density
  • High thermal conductivity
  • GaN can operate at high temperatures, without loss of reliability (250 °C compared to 225 °C for Si LDMOS)

  • Excellent ruggedness

Key applications

  • Commercial wireless infrastructure (base stations)
  • Radar systems
  • Broadband and narrow band general purpose amplifiers
  • Public mobile radios
  • Industrial Scientific Medical
  • Jammers
  • Test instrumentation

  • EMC testing

Related links

Application note

External articles

Selection guide

Technical note

Other type

Design tools & Assets

A central place for your design support and tooling.
For today´s short product development cycles, NXP
helps you with this portal to simplify your design.
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Training & events

View or download the latest product and application modules; developed by engineers for engineers

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In this section you can find the shows and events where you can meet NXP

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Descriptive summary

GaN technology brings a step change to the world of RF Power amplifiers in terms of power density and efficiency. This new technology will allow the industry to develop radical new design such as digital transmitter. NXP is commited to developing a GaN portfolio to completement their leading LDMOS products.

Design support tools

To support RF- and system engineers to design-in and integrate our solutions in the shortest time possible, we can offer various design and information documents such as layout files, best-in-class large signal models and loadpull data.

Products

Type numberDescriptionStatusQuick access
CLF1G0035-100Broadband RF power GaN HEMT Order sample
CLF1G0035-50Broadband RF power GaN HEMT Order sample
CLF1G0035S-100Broadband RF power GaN HEMT Order sample
CLF1G0035S-50Broadband RF power GaN HEMT Order sample

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