AFV121KH: 1000 W Peak, 960-1215 MHz, 50 V Airfast® RF Power LDMOS Transistors

Overview

Features

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

NI-1230H-4S, NI-1230S-4S,  NI-1230GS-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    60
  • P1dB (Typ) (W)
    1000
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1000.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    17.4 @ 1090.0
  • Efficiency (Typ) (%)
    52.2
  • Thermal Resistance (Spec) (°C/W)
    0.017
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Short Pulse Performance:

In 960-1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
960Pulse
(128 µsec, 10% Duty Cycle)
1390 Peak17.551.1
10301410 Peak17.551.8
10901370 Peak17.452.2
12151230 Peak16.955.8

Typical Long Pulse Performance:

In 960-1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
960Pulse
(2 msec, 10% Duty Cycle)
1160 Peak16.650.8
10301190 Peak16.852.1
10901210 Peak16.849.2
12151060 Peak16.250.6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles25 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 960-1215 MHz reference circuit.