AFV121KH: 1000 W Peak, 960-1215 MHz, 50 V Airfast® RF Power LDMOS Transistors

Overview

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

NI-1230H-4S, NI-1230S-4S,  NI-1230GS-4L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 960
Frequency Max (Max) (MHz) 1215
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 60
P1dB (Typ) (W) 1000
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1000 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 17.4 @ 1090
Efficiency (Typ) (%) 52.2
Thermal Resistance (Spec) 0.017
Matching Input
Class AB
Die Technology LDMOS

RF Performance Tables

Typical Short Pulse Performance:

In 960-1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
960Pulse
(128 µsec, 10% Duty Cycle)
1390 Peak17.551.1
10301410 Peak17.551.8
10901370 Peak17.452.2
12151230 Peak16.955.8

Typical Long Pulse Performance:

In 960-1215 MHz reference circuit, VDD = 50 Vdc, IDQ = 100 mA, Pin = 25 W
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
960Pulse
(2 msec, 10% Duty Cycle)
1160 Peak16.650.8
10301190 Peak16.852.1
10901210 Peak16.849.2
12151060 Peak16.250.6

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles25 Peak
(3 dB Overdrive)
50No Device Degradation
1. Measured in 960-1215 MHz reference circuit.