MMRF1317H: 1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors

Overview

Features

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1030
  • Frequency (Max) (MHz)
    1090
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61.1
  • P1dB (Typ) (W)
    1300
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    Peak @ 1500.0
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    1030.0@18.9
  • Efficiency (Typ) (%)
    56
  • Thermal Resistance (Spec) (°C/W)
    0.019
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 1030, 1090 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.956.0
1090(1)1100 Peak18.857.9

Typical Narrowband Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.258.1

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
> 10:1 at all Phase Angles40
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.