MMRF1317H: 1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors

Overview

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1030
Frequency Max (Max) (MHz) 1090
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 61.1
P1dB (Typ) (W) 1300
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1500 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 18.9 @ 1030
Efficiency (Typ) (%) 56
Thermal Resistance (Spec) 0.019
Matching I/O
Class AB
Die Technology LDMOS

RF Performance Tables

Typical Performance

In 1030, 1090 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(1)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.956.0
1090(1)1100 Peak18.857.9

Typical Narrowband Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
1300 Peak18.258.1

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030(2)Pulse
(128 µsec, 10% Duty Cycle)
> 10:1 at all Phase Angles40
(3 dB Overdrive)
50No Device Degradation
1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.