MMRF1008H: 960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

Overview

NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image

NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 960
Frequency Max (Max) (MHz) 1215
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 54.4
P1dB (Typ) (W) 275
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 275 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 20.3 @ 1030
Efficiency (Typ) (%) 65.5
Thermal Resistance (Spec) 0.08
Matching I/O
Class AB
Die Technology LDMOS