MMRF1009H: 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

Overview

NI-780H-2L, NI-780S-2L Package Image

NI-780H-2L, NI-780S-2L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 960
Frequency Max (Max) (MHz) 1215
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 57
P1dB (Typ) (W) 500
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 500 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 19.7 @ 1030
Efficiency (Typ) (%) 62
Thermal Resistance (Spec) 0.044
Matching I/O
Class AB
Die Technology LDMOS

RF Performance Table

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%
Application Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Narrowband500 Peak103019.762.0
Broadband500 Peak960-121518.557.0
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power