MRF6V12500H: 960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

Overview

NI-780H-2L, NI-780S-2L, NI-780GS-2L Package Image

NI-780H-2L, NI-780S-2L, NI-780GS-2L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 960
Frequency Max (Max) (MHz) 1215
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 57
P1dB (Typ) (W) 500
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 500 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 19.7 @ 1030
Efficiency (Typ) (%) 62
Thermal Resistance (Spec) 0.044
Matching I/O
Class AB
Die Technology LDMOS

RF Performance Table

Typical Pulse Performance

VDD = 50 Volts, IDQ = 200 mA
Application Signal Type Pout(1)
(W)
Freq.
(MHz)
Gps
(dB)
ηD
(%)
Narrowband
Short Pulse
Pulse
(128 µsec, 10% Duty Cycle)
500 Peak103019.762.0
Narrowband
Mode S ELM
Pulse
(48 x (32 µsec on, 18 µsec off),
Period 2.4 msec,
6.4% Long-term Duty Cycle)
500 Peak103019.762.0
BroadbandPulse
(128 µsec, 10% Duty Cycle)
500 Peak960-121518.557.0
1. Minimum output power for each specified pulse condition.
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power