MMRF5014H: 1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor

Overview

RF NI-360H-2SB Package image

RF NI-360H-2SB Package image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1
Frequency Max (Max) (MHz) 2700
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 51
P1dB (Typ) (W) 125
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 125 @ CW
Test Signal CW
Power Gain (Typ) (dB) @ f (MHz) 16 @ 2500
Efficiency (Typ) (%) 64.2
Thermal Resistance (Spec) 0.86
Matching Input
Class AB
Die Technology GaN

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
2500(1)CW125 CW16.064.2
2500(1)Pulse (100 µsec,
20% Duty Cycle)
125 Peak18.066.8

Typical Wideband Performance

VDD = 50 Vdc, TA = 25°C
Frequency
(MHz)
Signal Type Pout
(W)
Gps(2)
(dB)
ηD(2)
(%)
200-2500(3)CW100 CW12.040.0
1300-1900(4)CW125 CW14.545.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
2500(1)Pulse
(100 µsec,
20% Duty Cycle)
> 20:1 at All Phase Angles 5.0 Peak
(3 dB
Overdrive)
50No
Device
Degradation
1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 200-2500 MHz broadband reference circuit.
4. Measured in 1300-1900 MHz broadband reference circuit.