MMRF5014H: 1-2700 MHz, 125 W CW, 50 V Wideband RF Power GaN on SiC Transistor

Overview

Features

RF NI-360H-2SB Package image

RF NI-360H-2SB Package image

Key Parametrics

  • Frequency (Min) (MHz)
    1
  • Frequency (Max) (MHz)
    2700
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    51
  • P1dB (Typ) (W)
    125
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    125.0@CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    16@2500.0
  • Efficiency (Typ) (%)
    64.2
  • Thermal Resistance (Spec) (°C/W)
    0.86
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    GaN

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Vdc, IDQ = 350 mA, TA = 25°C
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
2500(1)CW125 CW16.064.2
2500(1)Pulse (100 µsec,
20% Duty Cycle)
125 Peak18.066.8

Typical Wideband Performance

VDD = 50 Vdc, TA = 25°C
Frequency
(MHz)
Signal Type Pout
(W)
Gps(2)
(dB)
ηD(2)
(%)
200-2500(3)CW100 CW12.040.0
1300-1900(4)CW125 CW14.545.0

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
2500(1)Pulse
(100 µsec,
20% Duty Cycle)
> 20:1 at All Phase Angles 5.0 Peak
(3 dB
Overdrive)
50No
Device
Degradation
1. Measured in 2500 MHz narrowband test circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 200-2500 MHz broadband reference circuit.
4. Measured in 1300-1900 MHz broadband reference circuit.