MMRF2006N: 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier

Overview

PQFN 8x8 Package Image

PQFN 8x8 Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1805
Frequency Max (Max) (MHz) 2170
Supply Voltage (Typ) (V) 28
P1dB (Typ) (dBm) 43
P1dB (Typ) (W) 20
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 2.4 @ AVG
Test Signal W-CDMA
Power Gain (Typ) (dB) @ f (MHz) 32.6 @ 2140
Efficiency (Typ) (%) 17
Thermal Resistance (Spec) 1.9
Matching I/O
Class AB
Die Technology LDMOS

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RF Performance Tables

Driver Application — 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz32.616.87.7–51.3
2140 MHz32.617.07.6–51.4
2170 MHz32.417.07.5–51.6
  • Capable of Handling 10:1 VSWR @ 32 Vdc, 2140 MHz, Pout = 33 W CW (3 dB Input Overdrive from Rated Pout)
  • Typical Pout @ 1 dB Compression Point 20 W CW

Driver Application — 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 230 mA, Pout = 2.4 W Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz31.817.47.6–51.2
1840 MHz31.817.47.7–50.2
1880 MHz31.817.47.7–51.0