MMRF1305H: 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

Overview

NI-780H-4L, NI-780S-4L Package Image

NI-780H-4L, NI-780S-4L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 2000
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 50
P1dB (Typ) (W) 100
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 100 @ CW
Test Signal 1-Tone
Power Gain (Typ) (dB) @ f (MHz) 27.2 @ 512
Efficiency (Typ) (%) 70
Thermal Resistance (Spec) 0.38
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Tables

30-512 MHz Broadband

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
30 to 512Two-Tone
(100 kHz spacing)
100 PEP19.030.0–30

512 MHz Narrowband

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
512CW10027.270.0
512Pulse (200 µsec,
20% Duty Cycle)
100 Peak26.070.0

Ruggedness, 512 MHz

Frequency
(MHz)
Signal Type VSWR Pout
(W)
Test
Voltage
Result
512Pulse
(100 µsec,
20% Duty Cycle)
>65:1
at all Phase
Angles
130
(3 dB
Overdrive)
50No
Device
Degradation
512CW126
(3 dB
Overdrive)