MMRF1304L: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor

Overview

NI-360 Package Image

NI-360 Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 2000
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 44
P1dB (Typ) (W) 25
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 25 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 25.9 @ 512
Efficiency (Typ) (%) 74
Thermal Resistance (Spec) 1.4
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Tables

HF, 1.8-30 MHz

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
1.8 to 30(1,3)Two-Tone
(10 kHz spacing)
25 PEP25.050.0–28

30-512 MHz Broadband

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
30-512(2,3)Two-Tone
(200 kHz spacing)
25 PEP17.332.0–32

512 MHz Narrowband

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
512(4)Pulse (100 µsec,
20% Duty Cycle)
25 Peak25.974.0
512(4)CW2526.075.0

Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
30(1)CW>65:1
at all Phase
Angles
0.11
(3 dB
Overdrive)
50No
Device
Degradation
512(2)CW0.95
(3 dB
Overdrive)
512(4)Pulse
(100 µsec,
20% Duty Cycle)
0.14 Peak
(3 dB
Overdrive)
512(4)CW0.14
(3 dB
Overdrive)
1. Measured in 1.8-30 MHz broadband reference circuit.
2. Measured in 30-512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.