MMRF1304N: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

Overview

Features

TO-270-2, TO-270G-2 Package Image

TO-270-2, TO-270G-2 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    44
  • P1dB (Typ) (W)
    25
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    CW @ 25.0
  • Test Signal
    CW
  • Power Gain (TYP) (dB) @ f (MHz)
    25.5@512.0
  • Efficiency (TYP) (%)
    74.7
  • Thermal Resistance (SPEC) (°C/W)
    1.2
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

VHF-UHF Performance

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
IMD
(dBc)
1.8 to 30Two-Tone
(10 kHz spacing)
25 PEP2551–30
30-512Two-Tone
(200 kHz spacing)
25 PEP17.130.1–32

512 MHz Narrowband, 1030 MHz Narrowband

VDD = 50 Volts
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
512Pulse (100 µsec,
20% Duty Cycle)
25 Peak25.474.5
512CW2525.574.7
1030CW2522.560

Ruggedness, 1030 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1030CW>65:1
at all Phase
Angles
0.34
(3 dB
Overdrive)
50No
Device
Degradation