MMRF1306H: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 600
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 61
P1dB (Typ) (W) 1250
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1250 @ CW
Test Signal 1-Tone
Power Gain (Typ) (dB) @ f (MHz) 22.9 @ 230
Efficiency (Typ) (%) 74.6
Thermal Resistance (Spec) 0.15
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulse
(100 µsec, 20% Duty Cycle)
1250 Peak23024.074.0
CW 1250 CW23022.974.6

Application Circuits — Typical Performance

Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW13002781
40CW13002685
81.36CW12502784
87.5-108CW11002480
144-148CW12502678
170-230DVBT2252530
352Pulse
(200 µsec,
20% Duty Cycle)
125021.566
352CW115020.568
500CW10001858

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pout
(W)
Test
Voltage
Result
230 Pulse
(100 µsec,
20% Duty Cycle)
>65:1 at all
Phase Angles
1500 Peak
(3 dB Overdrive)
50 No Device
Degradation