MMRF1006H: 10-500 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Overview

NI-1230H-4S, NI-1230S-4S Package Image

NI-1230H-4S, NI-1230S-4S Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 10
Frequency Max (Max) (MHz) 500
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 60
P1dB (Typ) (W) 1000
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1000 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 20 @ 450
Efficiency (Typ) (%) 64
Thermal Resistance (Spec) 0.03
Matching Unmatched
Class AB
Die Technology LDMOS