MMRF1314H: 1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

Overview

Features

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

NI-1230H-4S, NI-1230S-4S,  NI-1230GS-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1200
  • Frequency (Max) (MHz)
    1400
  • Supply Voltage (Typ) (V)
    52
  • P1dB (Typ) (dBm)
    60
  • P1dB (Typ) (W)
    1000
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1000.0@Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    15.5 @ 1200.0
  • Efficiency (Typ) (%)
    46.5
  • Thermal Resistance (Spec) (°C/W)
    0.018
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 1200-1400 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1200Pulse
(128 µsec, 10% Duty Cycle)
1130 Peak15.547.5
13001170 Peak17.247.0
14001000 Peak17.046.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1400Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles31.6 Peak
(3 dB Overdrive)
52No Device Degradation