MMRF1314H: 1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

Overview

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

NI-1230H-4S, NI-1230S-4S,  NI-1230GS-4L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1200
Frequency Max (Max) (MHz) 1400
Supply Voltage (Typ) (V) 52
P1dB (Typ) (dBm) 60
P1dB (Typ) (W) 1000
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1000 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 15.5 @ 1200
Efficiency (Typ) (%) 46.5
Thermal Resistance (Spec) 0.018
Matching I/O
Class AB
Die Technology LDMOS

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RF Performance Tables

Typical Performance

In 1200-1400 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1200Pulse
(128 µsec, 10% Duty Cycle)
1130 Peak15.547.5
13001170 Peak17.247.0
14001000 Peak17.046.5

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1400Pulse
(128 µsec, 10% Duty Cycle)
> 20:1 at all Phase Angles31.6 Peak
(3 dB Overdrive)
52No Device Degradation