MMRF1005H: 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

Overview

NI-780H-2L, NI-780S-2L Package Image

NI-780H-2L, NI-780S-2L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1200
Frequency Max (Max) (MHz) 1400
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 54
P1dB (Typ) (W) 250
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 250 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 22.7 @ 1300
Efficiency (Typ) (%) 57
Thermal Resistance (Spec) 0.07
Matching Input
Class AB
Die Technology LDMOS

RF Performance Tables

Typical Pulse Performance

VDD = 50 Vdc, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulse (200 µsec,
10% Duty Cycle)
250 Peak130022.757.0–18
  • Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 µsec

Typical CW Performance

VDD = 50 Vdc, IDQ = 10 mA, TC = 61°C
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
CW 230 CW130020.053.0–25