MRF8P29300H: 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

Overview

Features

NI-1230H-4S, NI-1230S-4S Product Images

NI-1230H-4S, NI-1230S-4S Product Images

Key Parametrics

  • Frequency (Min) (MHz)
    2700
  • Frequency (Max) (MHz)
    2900
  • Supply Voltage (Typ) (V)
    30
  • P1dB (Typ) (dBm)
    55.1
  • P1dB (Typ) (W)
    320
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    320.0@Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    13.3 @ 2900.0
  • Efficiency (Typ) (%)
    50.5
  • Thermal Resistance (Spec) (°C/W)
    0.06
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

Typical Pulse Performance

VDD = 30 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulse (100 µsec,
10% Duty Cycle)
320 Peak290013.350.5–17
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)