MRF8P29300H: 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

Overview

NI-1230H-4S, NI-1230S-4S Product Images

NI-1230H-4S, NI-1230S-4S Product Images

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 2700
Frequency Max (Max) (MHz) 2900
Supply Voltage (Typ) (V) 30
P1dB (Typ) (dBm) 55.1
P1dB (Typ) (W) 320
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 320 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 13.3 @ 2900
Efficiency (Typ) (%) 50.5
Thermal Resistance (Spec) 0.06
Matching Unmatched
Class AB
Die Technology LDMOS

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RF Performance Table

Typical Pulse Performance

VDD = 30 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulse (100 µsec,
10% Duty Cycle)
320 Peak290013.350.5–17
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 µsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)