MRFE6VP61K25H: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview

Features

NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image

NI-1230H-4S, NI-1230S-4S,  NI-1230GS-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61
  • P1dB (Typ) (W)
    1250
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    CW @ 1250.0
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    230.0@22.9
  • Efficiency (Typ) (%)
    74.6
  • Thermal Resistance (Spec) (°C/W)
    0.15
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Narrowband Performance

VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulse
(100 µsec, 20% Duty Cycle)
1250 Peak23024.074.0
CW 1250 CW23022.974.6

Application Circuits — Typical Performance

Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW13002781
40CW13002685
81.36CW12502784
87.5-108CW11002480
144-148CW12502678
170-230DVBT2252530
352Pulse
(200 µsec,
20% Duty Cycle)
125021.566
352CW115020.568
500CW10001858

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pout
(W)
Test
Voltage
Result
230 Pulse
(100 µsec,
20% Duty Cycle)
>65:1 at all
Phase Angles
1500 Peak
(3 dB Overdrive)
50 No Device
Degradation