MRFE6VP61K25N: 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors

Overview

OM-1230-4L, OM-1230G-4L Package Image

OM-1230-4L, OM-1230G-4L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 600
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 61
P1dB (Typ) (W) 1250
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1250 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 23 @ 230
Efficiency (Typ) (%) 72.3
Thermal Resistance (Spec) 0.06
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
87.5-108(1,2)CW1309 CW24.177.6
230(3)Pulse
(100 µsec, 20% Duty Cycle)
1250 Peak23.072.3

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
230(3) Pulse
(100 µsec,
20% Duty Cycle)
> 65:1 at all
Phase Angles
11.5 Peak
(3 dB Overdrive)
50 No Device
Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband test circuit.