MRFE6VP6300H: 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Overview

NI-780-4, NI-780S-4 Package Image

NI-780-4, NI-780S-4 Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 600
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 54.8
P1dB (Typ) (W) 300
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 300 @ CW
Test Signal 1-Tone
Power Gain (Typ) (dB) @ f (MHz) 25 @ 130
Efficiency (Typ) (%) 80
Thermal Resistance (Spec) 0.19
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Table

130, 230 MHz Broadband

Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulse (100 µsec,
20% Duty Cycle)
300 Peak23026.574.0–16
CW300 Avg.13025.080.0–15
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles
    • 300 Watts CW Output Power
    • 300 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec
  • Capable of 300 Watts CW Operation