MRFE6VP5600H: 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Overview

NI-1230H-4S, NI-1230S-4S Product Images

NI-1230H-4S, NI-1230S-4S Product Images

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 600
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 57.8
P1dB (Typ) (W) 600
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 600 @ CW
Test Signal 1-Tone
Power Gain (Typ) (dB) @ f (MHz) 24.6 @ 230
Efficiency (Typ) (%) 75.2
Thermal Resistance (Spec) 0.12
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Table

230 MHz Narrowband

Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulse (100 µsec,
20% Duty Cycle)
600 Peak23025.074.6–18
CW 600 Avg.23024.675.2–17
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
    • 600 Watts Pulse Peak Power, 20% Duty Cycle, 100 µsec