MRF1K50H: 1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

Features

MRF1K50H: Reference Circuits

MRF1K50H: Reference Circuits

MRF1K50H: NI-1230H-4S Package Image

MRF1K50H: NI-1230H-4S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    500
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61.8
  • P1dB (Typ) (W)
    1500
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1500.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    23.7 @ 230.0
  • Efficiency (Typ) (%)
    74
  • Thermal Resistance (Spec) (°C/W)
    0.12
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW1550 CW25.978.3
81.36(1)CW1400 CW23.075.0
87.5-108(2,3)CW1475 CW23.383.4
230(4)Pulse
(100 µsec, 20% Duty Cycle)
1500 Peak23.774.0
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.