MRFX1K80H: 1800 W CW over 1.8-470 MHz, 65 V Wideband RF Power LDMOS Transistor

Overview

Features

MRFX1K80H: Reference Circuits

MRFX1K80H: Reference Circuits

MRFX1K80H pin compatibility with previous generation parts

MRFX1K80H pin compatibility with previous generation parts

NI-1230H-4S Package Image

NI-1230H-4S Package Image

The Five Benefits of NXP 65 V LDMOS

Video

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    470
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    62.6
  • P1dB (TYP) (W)
    1800
  • Test Signal
    Pulse
  • Power Gain (TYP) (dB) @ f (MHz)
    24.0@230.0
  • Efficiency (TYP) (%)
    74
  • Thermal Resistance (SPEC) (°C/W)
    0.09
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

Typical Performance

Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
27(1)CW501200 CW26.082.3
57.51520 CW27.080.1
651800 CW27.875.6
87.5-108(2,3)CW601550 CW21.982.2
144CW651800 CW23.577.5
230(4)Pulse
(100 µsec, 20% Duty Cycle)
651800 Peak24.074.0
1. Data from 27 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.