MRFX1K80H: 1800 W CW over 1.8-470 MHz, 65 V Wideband RF Power LDMOS Transistor new

Overview

MRFX1K80H: Reference Circuits

MRFX1K80H: Reference Circuits

MRFX1K80H pin compatibility with previous generation parts

MRFX1K80H pin compatibility with previous generation parts

NI-1230H-4S Package Image

NI-1230H-4S Package Image

The Five Benefits of NXP 65 V LDMOS

Video

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 470
Supply Voltage (Typ) (V) 65
P1dB (Typ) (dBm) 62.6
P1dB (Typ) (W) 1800
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 24 @ 230
Efficiency (Typ) (%) 74
Thermal Resistance (Spec) 0.09
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Table

Typical Performance

Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
27(1)CW501200 CW26.082.3
57.51520 CW27.080.1
651800 CW27.875.6
87.5-108(2,3)CW601550 CW21.982.2
144CW651800 CW23.577.5
230(4)Pulse
(100 µsec, 20% Duty Cycle)
651800 Peak24.074.0
1. Data from 27 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.