MRFE6VP8600H: 470-860 MHz, 600 W, 50 V Broadband RF Power LDMOS Transistors

Overview

NI-1230H-4S, NI-1230S-4S Product Images

NI-1230H-4S, NI-1230S-4S Product Images

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 470
Frequency Max (Max) (MHz) 860
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 57.8
P1dB (Typ) (W) 600
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 125 @ AVG
Test Signal OFDM
Power Gain (Typ) (dB) @ f (MHz) 19.3 @ 860
Efficiency (Typ) (%) 30
Thermal Resistance (Spec) 0.19
Matching Input
Class AB
Die Technology LDMOS

RF Performance Tables

Narrowband Performance

Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
DVB-T (8k OFDM) 125 Avg.86019.330.0–65.5–12

Pulse Broadband Performance

Typical Pulse Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA, Pulse Width = 100 µsec, Duty Cycle = 10%
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulse 600 Peak47019.347.1
65020.053.1
86018.848.9