MRF1K50H: 1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

Overview

MRF1K50H: Reference Circuits and Test Fixture

MRF1K50H: Reference Circuits and Test Fixture

MRF1K50H: NI-1230H-4S Package Image

MRF1K50H: NI-1230H-4S Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 1.8
Frequency Max (Max) (MHz) 500
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 61.8
P1dB (Typ) (W) 1500
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 1500 @ Peak
Test Signal Pulse
Power Gain (Typ) (dB) @ f (MHz) 23.7 @ 230
Efficiency (Typ) (%) 74
Thermal Resistance (Spec)(°C/W) 0.1
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Table

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW1550 CW25.978.3
81.36(1)CW1400 CW23.075.0
87.5-108(2,3)CW1475 CW23.383.4
230(4)Pulse
(100 µsec, 20% Duty Cycle)
1500 Peak23.774.0
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.