MRF24300N: 300 W CW over 2400-2500 MHz, 32 V RF Power LDMOS Transistor

Overview

OM-780-2L Package Image

OM-780-2L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 2400
Frequency Max (Max) (MHz) 2500
Supply Voltage (Typ) (V) 32
P1dB (Typ) (dBm) 54.8
P1dB (Typ) (W) 300
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 300 @ CW
Test Signal CW
Power Gain (Typ) (dB) @ f (MHz) 13.1 @ 2450
Efficiency (Typ) (%) 60.5
Thermal Resistance (Spec) 0.24
Matching I/O
Class AB
Die Technology LDMOS

RF Performance Tables

Typical Performance

In 2400-2500 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
2450CW15.913.160.5320

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
24501CW> 5:1
at all Phase Angles
15.0
(2 dB Overdrive)
32No Device Degradation
1. Measured in 2450 MHz reference circuit.