MRF24300N: 300 W CW over 2400-2500 MHz, 32 V RF Power LDMOS Transistor

Overview

Features

OM-780-2L Package Image

OM-780-2L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    32
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (TYP) (W)
    300
  • Output Power (TYP) (W) @ Intermodulation Level at Test Signal
    300.0@CW
  • Test Signal
    CW
  • Power Gain (TYP) (dB) @ f (MHz)
    13.1@2450.0
  • Efficiency (TYP) (%)
    60.5
  • Thermal Resistance (SPEC) (°C/W)
    0.24
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

In 2400-2500 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)
Signal Type Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
2450CW15.913.160.5320

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
24501CW> 5:1
at all Phase Angles
15.0
(2 dB Overdrive)
32No Device Degradation
1. Measured in 2450 MHz reference circuit.