MRF6V3090N: 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

Overview

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 470
Frequency Max (Max) (MHz) 1215
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 49.5
P1dB (Typ) (W) 90
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 18 @ AVG
Test Signal OFDM
Power Gain (Typ) (dB) @ f (MHz) 22 @ 860
Efficiency (Typ) (%) 28.5
Thermal Resistance (Spec) 0.79
Matching Input
Class AB
Die Technology LDMOS

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RF Performance Tables

470-860 MHz

Typical Performance (UHF 470-860 Reference Circuit): VDD = 50 Volts, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output Signal PAR
(dB)
IMD Shoulder
(dBc)
DVB-T (8k OFDM)18 Avg. 47021.626.88.6–31.8
65022.928.08.7–34.4
86021.928.37.9–29.2

960-1215 MHz

Typical Performance (L-band 960-1215 MHz Reference Circuit):
VDD = 50 Volts, IDQ = 100 mA.
Signal Type Pout
(W)
f
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pulse (128 µsec,
10% Duty Cycle)
90 Peak 9601.318.455.3
10301.411856.9
10901.6517.450.7
12151.6817.351.0