MRF8VP13350N: 700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

Overview

Features

OM-780-4L, OM-780G-4L Package Image

OM-780-4L, OM-780G-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    700
  • Frequency (Max) (MHz)
    1300
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    55.4
  • P1dB (Typ) (W)
    350
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    CW @ 350.0
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    915.0@20.7
  • Efficiency (Typ) (%)
    67.5
  • Thermal Resistance (Spec) (°C/W)
    0.04
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

1300 MHz

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Gps
(dB)
ηD
(%)
Pout
(W)
1300(1)Pulse
(100 µsec, 20% Duty Cycle)
19.258.0350 Peak

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc
Frequency
(MHz)
Signal Type Gps
(dB)
ηD
(%)
Pout
(W)
915CW20.767.5355

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1300(1) Pulse
(100 µsec,
20% Duty Cycle)
> 20:1 at all
Phase Angles
9.6 Peak
(3 dB Overdrive)
50 No Device
Degradation
1. Measured in 1300 MHz pulse narrowband test circuit.