MRF8VP13350N: 700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

Overview

OM-780-4L, OM-780G-4L Package Image

OM-780-4L, OM-780G-4L Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 700
Frequency Max (Max) (MHz) 1300
Supply Voltage (Typ) (V) 50
P1dB (Typ) (dBm) 55.4
P1dB (Typ) (W) 350
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 350 @ CW
Test Signal CW
Power Gain (Typ) (dB) @ f (MHz) 20.7 @ 915
Efficiency (Typ) (%) 67.5
Thermal Resistance (Spec) 0.04
Matching Input
Class AB
Die Technology LDMOS

RF Performance Tables

1300 MHz

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Gps
(dB)
ηD
(%)
Pout
(W)
1300(1)Pulse
(100 µsec, 20% Duty Cycle)
19.258.0350 Peak

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc
Frequency
(MHz)
Signal Type Gps
(dB)
ηD
(%)
Pout
(W)
915CW20.767.5355

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
1300(1) Pulse
(100 µsec,
20% Duty Cycle)
> 20:1 at all
Phase Angles
9.6 Peak
(3 dB Overdrive)
50 No Device
Degradation
1. Measured in 1300 MHz pulse narrowband test circuit.