MHT1003N: 2450 MHz, 250 W CW, 32 V RF LDMOS Transistor for Consumer and Commercial Cooking

Overview

OM-780-2 Package Image

OM-780-2 Package Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 2450
Frequency Max (Max) (MHz) 2450
Supply Voltage (Typ) (V) 32
P1dB (Typ) (dBm) 54.2
P1dB (Typ) (W) 263
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 250 @ CW
Test Signal 1-Tone
Power Gain (Typ) (dB) @ f (MHz) 15.9 @ 2450
Efficiency (Typ) (%) 59
Thermal Resistance (Spec) 0.26
Matching I/O
Class AB
Die Technology LDMOS

RF Performance Tables

Typical Performance

VDD = 32 Vdc, IDQ = 25 mA
Frequency
(MHz)
Signal Type Gps
(dB)
PAE
(%)
Pout
(W)
2400CW15.057.0250
245015.959.0250
250014.955.0250

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450CW> 10:1
at all Phase
Angles
14
(3 dB
Overdrive)
32No
Device
Degradation