AFT09MS015N: 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor

Overview

PLD-1.5W Image

PLD-1.5W Image

Features

Key Parametrics

Product Specifications
Frequency (Min) (MHz) 136
Frequency Max (Max) (MHz) 941
Supply Voltage (Typ) (V) 12.5
P1dB (Typ) (dBm) 42
P1dB (Typ) (W) 16
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 16 @ CW
Test Signal CW
Power Gain (Typ) (dB) @ f (MHz) 17.2 @ 870
Efficiency (Typ) (%) 77
Thermal Resistance (Spec) 1
Matching Unmatched
Class AB
Die Technology LDMOS

RF Performance Tables

Narrowband Performance

(12.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Pout
(W)
870(1)17.277.016

Wideband Performance

(12.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)
Pin
(W)
Gps
(dB)
ηD
(%)
Pout
(W)
136-1740.3816.060.015
350-4700.2318.560.016
760-870(2)0.3216.852.315

Ruggedness, 870 MHz

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
870(1)CW> 65:1
at all Phase
Angles
0.5
(3 dB
Overdrive)
17No
Device
Degradation
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz UHF broadband reference circuit.